GlobalFoundries Awarded $35 Million Funding from U.S. Government to Accelerate Manufacturing of Next-Generation Chip Technology

Source: GlobalFoundries

GlobalFoundries (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. These chips are positioned to enable improved performance and efficiency in 5G and 6G cellular communications, automotive and industrial Internet of things (IoT), as well as power grids and other critical infrastructure. 

With the new $35 million in funding, awarded by the Department of Defense’s Trusted Access Program Office (TAPO), GF plans to purchase additional equipment to expand development and prototyping capabilities, moving closer to at-scale GaN-on-silicon semiconductor manufacturing. As part of the investment, GF plans to implement new capabilities for reducing the exposure of GF and its customers to supply chain constraints of gallium, while improving the speed of development, assurance of supply and competitiveness of U.S-made GaN chips. 

The funding builds on years of collaboration with the U.S. government – including $40 million in support from 2020-2022 – that leverages the talent of GF’s Vermont team and their 200mm semiconductor manufacturing experience, and applies it to GaN-on-silicon manufacturing. 200mm is state-of-the-art for GaN chip technology. 

“Vermont is a leader in semiconductor innovation. This federal funding is welcome news, and will solidify our state’s position as a leader at the forefront of manufacturing next-generation chips,” said Senator Peter Welch. “It’s critical we support investment in this industry here in Vermont and in the U.S. – both for our local economic growth and for our national security. I look forward to continuing to fight for our domestic semiconductor and chip manufacturers in the Senate.” 

“GaN on silicon is an ideal technology for high performance radio frequency, high voltage power switching and control applications for emerging markets, and it’s important for 6G wireless communications, industrial IoT, and electric vehicles,” said Dr. Thomas Caulfield, president and CEO of GF.

GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Today around 1,800 GF employees work at the site. Built on GF’s differentiated technologies, these GF-made chips are used in smartphones, automobiles, and communications infrastructure applications around the world. The facility is a DMEA accredited Trusted Foundry and manufactures secure chips in partnership with the U.S. Department of Defense, for use in some of the nation’s most sensitive aerospace and defense systems. 

News & Events

image of a think film solar panel made from Verde Technologies

Verde Lands Investment From Energy Veterans Amidst Rapid Advancements in Next-Gen Solar Technology

Read More
InSpace logo

InSpace Proximity and CodeSignal Announce Groundbreaking Partnership to Transform Education-to-Employment Pathways with Innovative AI-powered and Human-centered Technology

Read More
Gallium Nitride device being held by fingers

Governor Phil Scott and the State of Vermont Fully Committed to Vermont’s Cutting-Edge V-GaN Tech Hub

Read More
Tech Meetup event title with logos

Vermont Tech Networking Event at The Hub CoWorks in Rutland

Read More

Southern Vermont Economy Summit

Read More
Woman presenting at Generator pitch night

Generator’s JumpStart Expo & Pitch Night

Read More